Scope of SiC & GaN Power Semiconductor Market: Proposals & Trends Leading to 24.7% CAGR Growth during 2017-2026

Silicon Carbide (SiC) and Gallium Nitride (GaN) are vital sources to power semiconductor devices that are used in mobile devices and electric cars. SiC have been used for a long time, however, GaN has recently emerged in the market offering similar performance benefits to SiC but with reduced cost. Hence, the adoption of GaN is increasing as compared to SiC as it offers both price and performance benefits. This report, compiled by FactMR, provides in-depth analysis of the global SiC & GaN power semiconductor market for the forecast period 2017-2026, offering key insights on the growth prospects of the market.

Introduction of 5G mobile communication globally is one of the key factors driving the global market for SiC & GaN power semiconductor. Moreover, power semiconductors especially Radio Frequency type is required in mobile communication. Also, companies are focusing to introduce GaN-based power amplifier with high speed. Meanwhile, automotive electronics also accounts for heavy consumption of power semiconductors. With the rise in electric vehicles, the deployment of SiC & GaN power semiconductor in cars has also increased.

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As per the latest study by FactMR, the global market for SiC & GaN power semiconductor is likely to experience strong growth during 2017-2026. The global market for SiC & GaN power semiconductor is also estimated to bring in US$ 2,986.3 million revenue. Introduction of technically advanced devices with better power capacity is driving the market for SiC & GaN power semiconductor.

The scope of the FactMR’s report is to analyze the global SiC & GaN power semiconductor market for the forecast period 2017-2026 and offer accurate and unbiased insights to the readers. SiC & GaN power semiconductor suppliers, stakeholders and manufacturers in the global information and communication technology industry can benefit from the analysis offered in this report. Comprehensive analysis regarding the impact of technological advancements such as cloud computing, internet of things (IoT), big data and artificial intelligence is detailed in this report. The comprehensive study throws light on various trends, dynamics and restrains shaping future of the market, which can serve as a platform of further study, interest and understanding for the leading industries, journals and trade magazines pertaining to global SiC & GaN power semiconductor market.

Forecast Highlights on Global SiC & GaN Power Semiconductor Market

1) Asia Pacific Excluding Japan (APEJ) to emerge as the dominating region in the global SiC & GaN power semiconductor market. By the end of 2026, APEJ is projected to bring in more than US$ 2,200 million revenue. Increasing demand for mobile devices, the presence of the key companies are some of the factors driving the demand for SiC & GaN to power semiconductor in the region.
2) Meanwhile, Japan followed by Europe are also likely to see the significant growth in the coming years. Technological advancements in the regions are driving the market growth.
3) SiC is expected to witness significant growth during the forecast period. By the end of 2026, SiC as a material to power semiconductor is projected to exceed US$ 2,400 million revenue.
4) Compared to the various components, discrete SiC power devices are anticipated to witness growth. Discrete SiC power devices are projected to reach the value of nearly US$ 2,000 million revenue towards the end of 2026.
5) SiC & GaN power semiconductor is expected to be used largely in power supplies during the forecast period 2017-2026. By the end of 2026, power supplies are projected to bring in more than US$ 800 million revenue.

SiC & GaN power semiconductor to Find Largest Application in Power Supplies

SiC & GaN power semiconductor is likely to find the largest application in Power supplies between 2017 and 2026. Power supplies are estimated to create an incremental opportunity above US$ 700 million between the forecast period from 2017 to 2026. Increasing demand renewable energy is resulting in the development of power semiconductor devices. Moreover, Silicon Carbide and Gallium Nitride are considered suitable for power semiconductor devices as it helps in reducing on-state resistance and miniaturizing the size of power devices.

SiC to Emerge as the Highly Preferred Material for Semiconductor

Compared to Gallium Nitride (GaN), silicon carbide (SiC) is likely to emerge as the highly preferred material. By 2026 end, SiC is estimated to surpass US$ 2,400 million revenue. Silicon Carbide is helping devices to achieve high energy conversion function, power consumption, and fast charging. SiC power semiconductor devices are being used in devices with high power capacity. Whereas, GaN is used in medium to low power capacity.

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Discrete SiC Power Devices to Gain Maximum Traction in the Market

On the basis of components, discrete SiC power devices are likely to gain traction in the market from 2017 to 2026. Discrete SiC power devices are estimated to surpass US$ 1,900 million revenue towards 2026 end. Meanwhile, SiC power modules are also likely to achieve strong growth through 2026. SiC power devices is emerging as the most viable option for next-generation semiconductor elements due to its high frequency, high voltage performance and high temperature.

Competition Tracking

The report also profiles companies that are expected to remain active in the expansion of global SiC & GaN power semiconductor market through 2026, which include VisIC Technologies Ltd, Panasonic Corporation, NXP Semiconductors N.V., GaN Systems Inc., Exagan S.A.S, Cambridge Electronics, Avogy, Inc., Vincotech GmbH, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., Transform, Inc., Alpha & Omega Semiconductor, Renesas Electronics, SEMIKRON International GmbH, Danfoss A/S, Microsemi Corporation, Wolfspeed, Inc., ROHM Semiconductor, Global Power Technologies Group, Fuji Electric Systems Co., Ltd, Fairchild Semiconductor, and Infineon Technologies.

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