GaN Power Device Market Share, Size, Growth, Trends, Opportunities and Forecast Till 2026

According to IMARC Group's latest report, titled "GaN Power Device Market: Global Industry Trends, Share, Size, Growth, Opportunity and Forecast 2021-2026", the global GaN power device market exhibited strong growth during 2015-2020. Looking forward, IMARC Group expects the market to grow at a CAGR of around 19% during 2021-2026.

We are regularly tracking the direct effect of COVID-19 on the market, along with the indirect influence of associated industries. These observations will be integrated into the report.

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The gallium nitride (GaN) power device refers to a wide bandgap semiconductor that is used for high-efficiency power transistors and integrated circuits. This high electron mobility transistor (HEMT) is produced by combining a thin layer of aluminum gallium nitride (AIGan) and GaN crystal, which induces a two-dimensional electron gas (2DEG). As compared to silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device offers higher breakdown strength, faster-switching speed, stronger thermal conductivity, and lower on-resistance. Apart from this, GaN devices improve efficiency and reduce the costs of power conservation systems.

Market Trends and Drivers:

The GaN power device market is primarily being driven by the widespread product application in the automotive sector to be utilized in the lighting and braking control systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Moreover, GaN power devices are employed in radars to improve navigation and facilitate real-time air traffic, which is catalyzing the market growth. Additionally, these devices are extensively utilized in the manufacturing of healthcare scanning and diagnostic equipment and wireless charging technologies, which is positively influencing the market growth. Besides this, the integration of the internet of things (IoT) and fifth generation (5G) technology is acting as another growth-inducing factor.

GaN Power Device Market 2021-2026 Competitive Analysis and Segmentation:

Competitive Landscape With Key Players:

The competitive landscape of the GaN power device market has been studied in the report with the detailed profiles of the key players operating in the market.

Some of these key players include:

Efficient Power Conversion
GaN Systems Inc.
IQE
Koninklijke Philips N.V.
MACOM Technology Solutions
Microsemi Corporation (Microchip Technology Inc.)
Mitsubishi Electric Corporation
Navitas Semiconductor Inc.
Qorvo Inc.
Sumitomo Electric Industries Ltd.
Texas Instruments Incorporated
Toshiba Corporation
Wolfspeed Inc. (Cree Inc.)

Key Market Segmentation:

The report has segmented the global GaN power device market on the basis of device type, voltage range, application, end-use industry and region.

Breakup by Device Type:

Power Device
Discrete Power Device
Integrated Power Device
RF Power Device
Discrete RF Power Device
Integrated RF Power Device

Breakup by Voltage Range:

600 Volt

Breakup by Application:

Power Drives
Power Supply Systems
Radio Frequency Based Systems

Breakup by End-Use Industry:

Telecommunications
Automotive
Renewable Power Generation
Military
Aerospace and Defense
Consumer Electronics
Others

Breakup by Region:

North America
Asia Pacific
Europe
Latin America
Middle East and Africa

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Key Highlights of the Report:

Market Performance (2015-2020)
Market Outlook (2021-2026)
Market Trends
Market Drivers and Success Factors
Impact of COVID-19
Value Chain Analysis
Comprehensive mapping of the competitive landscape

If you need specific information that is not currently within the scope of the report, we will provide it to you as a part of the customization.

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This release was published on openPR.