Press release
GaN on Diamond Semiconductor Substrates Market - Segmentation, Major Players & Geographical Analysis, 2031
Transparency Market Research delivers key insights on the global GaN on diamond semiconductor substrates market. In terms of revenue, the global GaN on diamond semiconductor substrates market is estimated to expand at a CAGR of 16.56% during the forecast period, owing to numerous factors, regarding which TMR offers thorough insights and forecasts in its report on the global GaN on diamond semiconductor substrates market.The global GaN on diamond semiconductor substrates market is broadly affected by several factors, including rise in the demand for GaN on diamond based high electron mobility transistors (HEMTs).
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The power electronics industry has witnessed the theoretical limit reached by silicon MOSFETs and needs to move to a new element. GaN (Gallium Nitride) on diamond is an alternative material to pure GaN in the field of high power semiconductors and power electronics.
Gallium nitride is a kind of wide-gap compound semiconductor that has a high crystalline, good uniformity, and superior surface quality. GaN on diamond semiconductor substrate offers key parameters such as high thermal conductivity, high electrical resistivity, and three times smaller devices at both device and system level. These advantages make GaN on diamond power electronics devices highly attractive for high power RF applications, such as commercial base stations, military radar applications, satellite communication, and weather radars.
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The increase in the demand for GaN on diamond based high electron mobility transistors (HEMTs) due to their properties such as reduction of the thermal resistance between the heat sources and diamond decreases the thermal constraints providing the device designer additional options to exploit the inherent characteristics. Additionally, HEMTs are atomically attached to a CVD diamond substrate. This technology has the feasibility of producing GaN-based devices on polycrystalline CVD diamond substrates to maximize heat extraction from devices that work at high power by situating the diamond substrates in the immediate proximity of the transistor. This is expected to fuel the demand for GaN on diamond semiconductor substrates across various GaN semiconductor devices such as HEMTs over the next few years.
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Key players operating in the global GaN on diamond semiconductor substrates market are Blue Wave Semiconductor, Advanced Diamond Technologies, Carat Systems, Cornes Technologies Ltd., Crystallume, Diamond Microwave Devices Limited, Element Six, IIa Technologies Pte. Ltd., Microwave Enterprises Ltd., Neocoat SA, Qorvo Inc., and RFHIC Corporation.
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Transparency Market Research registered at Wilmington, Delaware, United States, is a global market research firm that offers market analysis reports and business consulting. Our exclusive blend of quantitative forecasting and trends analysis provides forward-looking insights for thousands of decision makers. Our experienced team of Analysts, Researchers, and Consultants use proprietary data sources and various tools & techniques to gather and analyze information.
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