GaN Semiconductor Devices Market to See Incredible Growth During 2022-2031, TMR Study

Gallium nitride (GaN) is a mechanically stable, very hard, wide bandgap semiconductor. Power devices based on GaN outperform silicon-based devices in terms of breakdown strength, switching speed, thermal conductivity, and on-resistance. GaN is used to build semiconductor power devices as well as RF components. GaN has proved to be an effective replacement technology for silicon semiconductors in power conversion, RF, and analog applications.

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GaN technology is expected to gain popularity in the next few years, owing to the rise in demand for higher power, higher performance semiconductors in power circuits, RF designs, LEDs, etc. Rise in usage of GaN power semiconductor devices in smartphones, laptops, and monitors to control battery's charging and discharging currents is likely to augment the global market in the next few years. Rapidly rising gallium nitride uses in consumer electronics is projected to drive the consumer electronics market in the next few years. Gallium nitride companies are increasingly focusing on improving GaN technology to cater to the rise in demand for GaN devices in power electronics.

GaN semiconductor devices used in power supplies support multiple voltages so that they can be connected to smartphones, laptops, etc. GaN HEMTs are effective in meeting these requirements because they are high-voltage devices that are capable of MHz switching while remaining efficient. Use of high-voltage DC power supplies in large-scale data centers is increasing, because it improves power distribution efficiency by reducing the number of AC/ DC conversions. Additionally, rise in demand for high-power applications in the industrial and telecommunications sectors is projected to drive the demand for GaN semiconductor devices in the near future. Furthermore, surface-emitting organic EL lighting, which is popular for interior lighting, necessitates a thin power supply.

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Consequently, Gallium nitride devices are expected to be useful in recognizing an ultra-thin power supply. Gallium nitride power devices are used in diverse applications for power supply and conversion. For Instance, Infineon's GaN technology solutions provide benchmark efficiency and maximize power density for the development of telecommunication infrastructure. Furthermore, using Infineon's GaN transistors for efficient power conversion reduces operating costs by reducing the gallium nitride power supply footprint while providing the highest solution robustness.

Rapid development of 5G communication in the last few years is boosting the hardware requirements for 5G base stations. 5G communication, which aims to further enhance the transmission speed of signals, is developed to increase the transmitting power to improve the signal-to-noise ratio for transmitting more accurate signals. Gallium nitride devices are used to make high-power radio frequency devices in 5G base stations as well as power electronic devices in circuits, as these are wide bandgap semiconductors with large forbidden bandwidth, high electron saturated drift velocity, low dielectric constant, and excellent electrical conductivity.

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According to the Global System for Mobile Communications Association (GSMA), presently, China has the most 5G base stations and connections in the world. China had 480 million 5G connections by the end of 2021, and it was expected to grow to 650 million in just one year, accounting for more than 60% of global 5G mobile connections. Therefore, the 5G technology market is expected to advance at a rapid pace during the forecast period. However, high cost of raw materials is one of the factors hampering the global GaN semiconductor devices market during the forecast period.

In terms of component, the global GaN semiconductor devices market has been segregated into transistor, gate driver IC, power IC, controller, power amplifier, and others. The transistor segment held 32% share of the global GAN semiconductor devices market in 2021. It is projected to dominate the global market during the forecast period. GaN transistors offer numerous benefits over traditional technologies such as Sic and Si. Transistors are used in diverse digital electronics applications such as radar, air traffic control, space exploration, and telecommunications due to their properties such as higher power density, higher breakdown voltage, higher thermal conductivity, and reduced power requirements. Moreover, GaN transistors meet critical RF requirements such as high gain, low power consumption, high throughput, and extremely fast switching speeds.

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Gallium Nitride is a binary III/V direct bandgap semiconductor that is well-suited for high-power, high-temperature transistors. Gallium nitride is also employed in power semiconductor devices, radio frequency components, lasers, and photonics. Some of the major players provide GaN transistor in the market and contribute to the market growth. Texas Instruments Incorporated develops a range of gallium nitride (GaN) FETs (field effect transistors) with integrated gate drivers and GaN power devices that provide the most efficient GaN solution with longer reliability and cost savings. These devices can be used in diverse applications, ranging from telecommunications, servers, motor drives and laptop adapters to on-board chargers for electric vehicles.

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