Press release
GaN Power Discrete Device Market Future Outlook (2023-2029) Trends, Scope, Size, Demand, Competitors Study, by Region, Top Players - NXP Semiconductors N.V., GaN Systems Inc, Texas Instruments, Infineon Technologies AG, Fujitsu Limited
GaN Power Discrete Device Market
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GaN power discrete devices have excellent physical characteristics such as low conduction loss and high current density, which can significantly reduce the power loss and cooling load of the communication system and greatly reduce the operating cost. It has been widely used in microwave integrated circuits, high voltage and high power fields. Gallium nitride high power semiconductor devices also began to be used in inverter, voltage regulator, transformer, wireless charging and other fields.
By Company
- Efficient Power Conversion Corporation
- NXP Semiconductors N.V.
- GaN Systems Inc
- Texas Instruments
- Infineon Technologies AG
- Fujitsu Limited
- Transphorm Inc
- Cree Incorporated
- OSRAM Opto Semiconductors
- Qorvo
Segment by Type
- Embedded Type
- Ordinary Type
Segment by Application
- Consumer Electronics
- IT & Telecommunications
- Automotive
- Aerospace & Defense
- Others
Production by Region
- North America
- Europe
- China
- Japan
- South Korea
For a more in-depth understanding of the market, the report provides profiles of the competitive landscape, key competitors, and their respective market ranks. The report also discusses technological trends and new product developments.
Direct Purchase of the Global GaN Power Discrete Device Market Research Report (Use Available 25% Discount Coupon Code: DIS25) https://www.reportsnreports.com/purchase.aspx?name=6877447
This report presents the worldwide GaN Power Discrete Device Market size (value, production and consumption), splits the breakdown (data status 2017-2023 and forecast to 2029), by manufacturers, region, type and application. This study also analyzes the market status, market share, growth rate, future trends, market drivers, opportunities and challenges, risks and entry barriers, sales channels, distributors and Porter's Five Forces Analysis.
Table of Contents
1 GaN Power Discrete Device Market Overview
1.1 Product Definition
1.2 GaN Power Discrete Device Segment by Type
1.2.1 Global GaN Power Discrete Device Market Value Growth Rate Analysis by Type 2022 VS 2029
1.2.2 Embedded Type
1.2.3 Ordinary Type
1.3 GaN Power Discrete Device Segment by Application
1.3.1 Global GaN Power Discrete Device Market Value Growth Rate Analysis by Application: 2022 VS 2029
1.3.2 Consumer Electronics
1.3.3 IT & Telecommunications
1.3.4 Automotive
1.3.5 Aerospace & Defense
1.3.6 Others
1.4 Global Market Growth Prospects
1.4.1 Global GaN Power Discrete Device Production Value Estimates and Forecasts (2018-2029)
1.4.2 Global GaN Power Discrete Device Production Capacity Estimates and Forecasts (2018-2029)
1.4.3 Global GaN Power Discrete Device Production Estimates and Forecasts (2018-2029)
1.4.4 Global GaN Power Discrete Device Market Average Price Estimates and Forecasts (2018-2029)
1.5 Assumptions and Limitations
2 Market Competition by Manufacturers
2.1 Global GaN Power Discrete Device Production Market Share by Manufacturers (2018-2023)
2.2 Global GaN Power Discrete Device Production Value Market Share by Manufacturers (2018-2023)
2.3 Global Key Players of GaN Power Discrete Device, Industry Ranking, 2021 VS 2022 VS 2023
2.4 Global GaN Power Discrete Device Market Share by Company Type (Tier 1, Tier 2 and Tier 3)
2.5 Global GaN Power Discrete Device Average Price by Manufacturers (2018-2023)
2.6 Global Key Manufacturers of GaN Power Discrete Device, Manufacturing Base Distribution and Headquarters
2.7 Global Key Manufacturers of GaN Power Discrete Device, Product Offered and Application
and More…
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