GaN Semiconductor Devices Market Size, Trends, In-depth Analysis, Research Report Forecast up to 2028: Key Players are Efficient Power Conversion Corp and NXP Semiconductors NV.

The prime factors propelling the growth of the GaN semiconductor devices market are the rise in demand for GaN semiconductors by the consumer electronics sector and the growing consumption of diodes.

The GaN semiconductor devices market will expand at a robust pace during the forecast period.

GaN semiconductor devices are electronic components made from a compound of Gallium and Nitrogen used to produce high-frequency, high-power, and high-performance electronic circuits employed in various applications, including wireless communication, automotive electronics, defense, aerospace, and IoT devices. GaN devices offer faster switching speeds, which makes them suitable for high-frequency applications. In addition, the advantages of GaN semiconductor devices, such as wider bandgap permitting GaN devices to operate at higher temperatures and higher voltages, resulting in higher efficiency and improved reliability, stimulating the demand for the RaN semiconductor devices market.

In addition, the emergence and adoption of 5G infrastructure worldwide stimulate the demand for RaN semiconductors. The development and deployment of 5G networks require high-performance RF GaN semiconductors that offer faster data transfer rates, lower latency, and higher capacity than previous wireless networks.

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The GaN semiconductor devices have been segmented into type, component, industry vertical, and geography.

By type, the market has been classified into power semiconductors, RF semiconductors, and opto-semiconductors. The RF semiconductors segment in the GaN semiconductor devices market is expected to majorly increase its market share, driven by the growing demand for wireless communication, advancements in automotive electronics, and the increasing adoption of IoT devices. The growing use of electronic systems in modern vehicles, including infotainment systems, ADAS (Advanced Driver Assistance Systems), and electrification, is driving the demand for RF GaN semiconductors since they offer high-power and high-frequency performance in harsh automotive environments.
Further, the defense and aerospace sectors contribute majorly to the demand for RF GaN semiconductors for communication. The recent research and development in GaN technology by the European Space Agency is encouraging a rise in the use of RF GaN devices. For instance, the European Space Agency declared the use of RF GaN modules and amplifiers in its future projects, such as the Biomass satellite and Copernicus Sentinel-1.

Based on components, the division has been done into diodes, transistors, rectifiers, and power ICs. The diode segment is projected to hold a substantial share of the GaN semiconductor devices market driven by the increasing consumption of electronic devices, increasing the usage of signal diodes. For instance, the data from World Bank predicted that the electric application and electronic sector worldwide would increase its value by US$450 billion by the end of 2023. In addition, the federal reserve system of the US revealed that the manufacture of home electronic appliances increased by 15.2% from 2022 to 2023.

By region the Asia Pacific region is expected to retain a dominating market share and witness significant growth due to the rapid advancement of the electronics sector of certain countries such as South Korea, India, and China. Further, the market for GaN semiconductors in the region is expected to grow as a result of the swift implementation of 5G networks, the expansion of Internet of Things (IoT) applications for devices, including aided driving and automobile-to-all connectivity for smart mobility, and the use of EVs in the region.

As a part of the report, the major players covered in the GaN semiconductor devices market are Toshiba Corporation, Wolfspeed Inc, GaN Systems Inc, Infineon Technologies AG, Efficient Power Conversion Corp, NXP Semiconductors NV, Texas Instruments, NTT Advanced Technology Corp, STMicroelectronics, and Nexperia.

This GaN semiconductor devices market has been analyzed into the following segments:

• By Type

o Power Semiconductors
o RF Semiconductors
o Opto-Semiconductors

• By Component

o Diodes
o Transistors
o Rectifiers
o Power ICs

• By Industry Vertical

o Consumer Electronics
o Automotive
o Communications
o Medical
o Aerospace and Defense
o Others

• By Geography

o North America

• United States
• Canada
• Mexico

o South America

• Brazil
• Argentina
• Others

o Europe

• United Kingdom
• Germany
• France
• Spain
• Others

o Middle East and Africa

• UAE
• Israel
• Saudi Arabia
• Others

o Asia Pacific

• Japan
• China
• India
• South Korea
• Thailand
• Taiwan
• Indonesia
• Others

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