Automotive GaN-on-Silicon Technology Market Size, Share, Trends And Forecast To 2031

It is anticipated that the market for automotive GaN on silicon technology will continue to expand at a CAGR of 21.2% during the forecast period of 2022-2030. It is predicted that the market for GaN-on-silicon technology would expand throughout the forecast period due to the presence of driving factors such as reduced on-resistance, higher thermal conductivity, greater switching speed, and higher breakdown strength. However, the high cost of both materials and manufacturing may act as a barrier to the expansion of the market for GaN-on-silicon technology throughout the time covered by the estimate.

Devices based on GaN are referred to as 'green technology' devices because of their low power consumption, high-temperature resistiveness, high voltage, high electron mobility, and improved thermal stability. It is predicted that the increased performance features of gallium nitride, which have enabled the use of GaN in a wide variety of LEDs and high-frequency RF equipment, will continue to boost the global market for GaN on silicon. Leading companies in the GaN silicon technology market are cutting costs in order to satisfy the growing demand for GaN semiconductor products. In light of this, it is anticipated that the expansion of the GaN on silicon technology market would also be driven by the increasing expenditures investment made by key companies in the industry.

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Silicon's shortcomings as a material for use in high-frequency and high-power applications were quickly recognised by the industry, and concurrently, research into alternative materials has been making steady headway in the background for decades. GaN, which is now in its early stages of development but already outperforms silicon for higher voltage applications in most comparisons, is one of the top candidates for this position.It is projected that the GaN-on-silicon technology would replace silicon due to its better breakdown strength, thermal conductivity, and faster switching speed. It is anticipated that the technology will be more efficient than traditional power chips based on silicone and will eventually become the next generation of power semiconductors. Over the next several years, there is anticipation that a more optimistic perspective from the consumer electronics industry would help to enhance the market landscape. Gallium nitride has a tremendous advantage over silicon since it can produce a power efficiency of 70% together with superior scalability at high frequencies. This gives it a big potential market share. Because gallium nitride has a wider band gap and can withstand higher voltages, it is likely to replace silicon as the material of choice for electronic applications.

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In 2021, the market for wafers with a size of 200 millimetres maintained the biggest market share, accounting for almost 40 % of total revenue. Wafers with a size of two hundred millimetres are currently the primary focus of the efforts that manufacturers are putting forth in order to widen the scope of applications for power conversion. The GaN on silicon technology that utilises a wafer size of 200 millimetres possesses a wide variety of advantageous qualities. A big threshold voltage (VTH>2V), low specific on-resistance, dispersion free (20 percent Dynamic RDS-ON), and huge voltage ranges are some of these properties (200V and 650V). The demand for this particular product in this market sector is being driven in large part by these attributes. When executed at a wafer size of 200 millimetres, the GaN-on-Si epitaxy results in a surface with an excellent morphology and a high level of reproducibility.
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According to Navitas Semiconductor, GaN-based onboard chargers (OBCs) for electric vehicles are predicted to charge up to three times faster than older silicon systems while saving up to seventy per cent of the energy required to do so. According to the business, GaN OBCs, DC-DC converters, and traction inverters are projected to either increase the range of electric vehicles (EVs) or cut the cost of batteries by 5%, and they will also speed the adoption of EVs worldwide by three years. It is projected that upgrading electric vehicles to GaN will reduce CO2 emissions from the transportation industry by 20% per year by the year 2050, which is the aim set by the Paris Accord.

In 2021, the Asia-Pacific region dominated the global market with a revenue contribution of about 37.5% during the forecast period 2022 to 2030. The rate of growth has been particularly visible in Asia and the Pacific, where there has been a general drive for increased manufacturing production, which requires the adoption of efficient technology and goods. It is important to keep in mind, despite this, that the developed economies of Europe and North America continue to exert the most influence over the industry in terms of revenue generation. North America region is anticipated to have strong growth with a CAGR 11%. forecast period, it is anticipated that the GaN market on the silicon technology market in Europe will expand at a compound annual growth rate of 9%.

Key players in the global GaN on silicon technology market are expanding their businesses through strategic mergers and acquisitions, as well as collaborations. The market for GaN silicon technology displays varying degrees of market consolidation. The market is almost entirely controlled by the top five most powerful competitors at the moment. These firms have a large amount of sway in the market for GaN on silicon technology, and have intense focus oninnovation and deployment. Outsourcing manufacturing capabilities to developing countries is becoming increasingly popular as a means of achieving the goal of creating high-quality goods at competitive prices. The findings of the report's analysis indicate that major competitors in the market are strongly emphasising on research and development in order to secure their positions there for the long term.NXP Semiconductor, GaN Systems, Panasonic Corporation, Fujitsu Semiconductor, Transphorm Inc., Texas Instruments, Qorvo, Inc., OSRAM Opto Semiconductors GmbH, Infineon Technologies AG, and Cree, Inc. are some of the most notable companies currently operating in the global GaN on silicon technology market.

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