Silicon EPI Wafer Market Demand Analysis and Projected huge Growth by 2028

The Silicon EPI Wafer Market size is expected to grow from US$ 3,008.57 million in 2022 to US$ 4,997.32 million by 2028; it is estimated to grow at a CAGR of 8.8% from 2022 to 2028.

Gallium nitride (GaN) is a semiconductor with a wide bandgap that enables devices to function at higher temperatures and voltages compared to those based on silicon. GaN also has a greater dielectric breakdown, which makes it possible to create smaller devices with lower resistance and capacitance. Power and radio frequency (RF) devices utilize epitaxial GaN wafers that are characterized by high efficiency and power output. These wafers are used in a range of applications, including defense radars, power converters for electric cars, 5G base stations, and quick chargers for IT devices. IVWorks, a South Korean company, employs deep learning-based artificial intelligence (AI) epitaxy technology to manufacture gallium nitride (GaN) epitaxial wafers. These wafers are a crucial component of DC power devices and 5G communication devices, and the company's innovative approach has attracted a US$ 6.7 million Series B investment.

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Analysis of the Top Market Players:

1. Applied Materials, Inc.
2. II-VI Incorporated
3. Shin-Etsu Chemical Co., Ltd.
4. SUMCO Corporation
5. Wafer World Inc.
6. Siltronic AG
7. Nichia Corporation
8. Global Wafers Japan Co., Ltd.
9. EpiGaN nv (Soitec Belgium N.V.)
10. SK Siltron Co., Ltd..

In this report, the market has been segmented on the basis of:

Wafer Size (6 Inch, 8 Inch, 12 Inch, and Others)
Application (LED, Power Semiconductor, and MEMS-based Device)
End User (Consumer Electronics, Automotive, Healthcare, Aerospace and Defense, and Others)
Type (Heteroepitaxy and Homoepitaxy)

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Due to its high electron mobility, current density, and breakdown voltage, GaN is a semiconductor material that enables the creation of high-efficiency, high-output power devices that operate at high frequencies. GaN is superior to Si, SiC, and GaAs materials in terms of size, speed, efficiency, and power output. Unlike Si or SiC, GaN has not been adequately developed using free-standing wafer technology, and its epitaxial growth requires a heterogeneous substrate. Although Si can accommodate wafers with large diameters at an affordable cost, managing stress and defect density is challenging due to the significant lattice mismatch and thermal expansion coefficient difference from GaN. The continuous evolution of AI-based GaN wafer technology presents an attractive opportunity for the growth of the silicon EPI wafer market.

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