Silicon Carbide Discrete Devices Market Report 2025

On Jul 30, the latest report "Global Silicon Carbide Discrete Devices Market 2025 by Manufacturers, Regions, Types and Applications, Forecast to 2031" from Global Info Research provides a detailed and comprehensive analysis of the global Silicon Carbide Discrete Devices market. The report provides both quantitative and qualitative analysis by manufacturers, regions and countries, types and applications. As the market is constantly changing, this report explores market competition, supply and demand trends, and key factors that are causing many market demand changes. The report also provides company profiles and product examples of some of the competitors, as well as market share estimates for some of the leading players in 2025.

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According to our (Global Info Research) latest study, the global Silicon Carbide Discrete Devices market size was valued at US$ 4012 million in 2024 and is forecast to a readjusted size of USD 13530 million by 2031 with a CAGR of 19.2% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
This report studies discrete silicon carbide (SiC) power devices, include Silicon Carbide MOSFET Discretes, Silicon Carbide Diodes and Others (SiC JFETs & FETs).
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.
Currently automotive is the largest application of discrete SiC power devices. driven by demand from China, UAS, EU, and Japan. China is one of the world's largest automotive markets, and its growth potential remains high. In particular, high rates of growth for electric-powered vehicles make China one of the largest markets for electromobility.
Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.
This report is a detailed and comprehensive analysis for global Silicon Carbide Discrete Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.


This report also provides key insights about market drivers, restraints, opportunities, new product launches or approval.
Silicon Carbide Discrete Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type: SiC MOSFET、 SiC Diode、 SIC Module
Market segment by Application: Automotive & EV/HEV、 EV Charging、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Others
Major players covered: STMicroelectronics、 Infineon、 Wolfspeed、 Rohm、 onsemi、 BYD Semiconductor、 Microchip (Microsemi)、 Mitsubishi Electric (Vincotech)、 Semikron Danfoss、 Fuji Electric、 Navitas (GeneSiC)、 Toshiba、 Qorvo (UnitedSiC)、 San'an Optoelectronics、 Littelfuse (IXYS)、 CETC 55、 WeEn Semiconductors、 BASiC Semiconductor、 SemiQ、 Diodes Incorporated、 SanRex、 Alpha & Omega Semiconductor、 Bosch、 KEC Corporation、 PANJIT Group、 Nexperia、 Vishay Intertechnology、 Zhuzhou CRRC Times Electric、 China Resources Microelectronics Limited、 StarPower、 Yangzhou Yangjie Electronic Technology、 Guangdong AccoPower Semiconductor、 Changzhou Galaxy Century Microelectronics、 Hangzhou Silan Microelectronics、 Cissoid、 SK powertech、 InventChip Technology、 Hebei Sinopack Electronic Technology、 Oriental Semiconductor、 Jilin Sino-Microelectronics、 PN Junction Semiconductor (Hangzhou)、 United Nova Technology

The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide Discrete Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide Discrete Devices, with price, sales quantity, revenue, and global market share of Silicon Carbide Discrete Devices from 2020 to 2025.
Chapter 3, the Silicon Carbide Discrete Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide Discrete Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment Silicon Carbide Discrete Devices the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the Silicon Carbide Discrete Devices sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2024.and Silicon Carbide Discrete Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide Discrete Devices.
Chapter 14 and 15, to describe Silicon Carbide Discrete Devices sales channel, distributors, customers, research findings and conclusion.

The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Silicon Carbide Discrete Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace

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