Press release
Global and U.S. Liquid-phase Precursor Market Report, Published by QY Research.
https://www.qyresearch.com/reports/5444845/liquid-phase-precursor
Core market data:
Global market size: USD 2.7 billion
CAGR (2024-2030): 7.2%
Average price: USD 64000 per ton
Annual production: 42 kilotons
Gross margin: 39%
Production capacity: 52 kilotons
List of Main players:
Merck (Germany)
Air Liquide (France)
Linde (UK)
Air Products (USA)
BASF (Germany)
Dow Chemical (USA)
Honeywell (USA)
Sumitomo Chemical (Japan)
SK Materials (South Korea)
ADEKA Corporation (Japan)
Hansol Chemical (South Korea)
SoulBrain (South Korea)
Nanmat Technology (Taiwan)
DuPont (USA)
Entegris (USA)
Tanaka Kikinzoku (Japan)
FUJIFILM Holdings (Japan)
UP Chemical (South Korea)
Botai Electronic Material (China)
Wonik Materials (South Korea)
1. By Chemical Category
Aqueous Precursor
Non-Aqueous Precursor
2. By Element System
Oxide Precursor
Nitride Precursor
Carbide Precursor
Sulfide Precursor
3. By Application Method
Organic Precursor
Inorganic Precursor
4. By Application
Semiconductor
Photovoltaic
Optoelectronic
Advanced Ceramic
Aerospace & Defense
Case study for bidding
Time: January 2024
Supplier: Merck KGaA (Germany)
Buyer: TSMC (Taiwan)
Product: High-Purity Liquid ALD Precursor (Hf-based dielectric precursor, 99.999% purity)
Quantity: 1,950 tons
Contract Value: USD 116 million
Delivery Timeline: December 2024
Detailed Application Scenario
In this project, TSMC used Merck's ultra-high-purity liquid-phase ALD precursor to deposit hafnium-based high-k dielectric layers in advanced 3 nm semiconductor nodes. The precursor offered excellent volatility, thermal stability, and reactivity, enabling precise layer thickness control at the atomic scale.
The liquid injection ALD system used by TSMC required stable viscosity and purity to prevent clogging and ensure uniform precursor delivery across large wafer batches. The precursor produced defect-free dielectric films with excellent breakdown strength and low leakage current, supporting reliable transistor operation at ultra-small geometries.
TSMC selected this product for its electronic-grade purity, compatibility with low-temperature ALD, and superior film uniformity, which outperformed older solid-source and gas-phase precursors. The project highlighted the critical importance of liquid-phase precursors in next-generation semiconductor manufacturing, advanced photovoltaic technologies, and precision coating systems where ultra-high uniformity and chemical control are mandatory.
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