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Press Releases from IPDiA (9 total)

Latest news reports on the IPDiA-Leti Common Lab results

Leti and IPDiA are proud to unveil a new worldwide record in capacitance density GRENOBLE, France – April 10, 2012 – CEA-Leti and IPDiA report to

IPDiA and TecStar/Macnica announce Distribution Agreement for Japan

IPDiA is pleased to announce that a distribution agreement has been signed with TecStar Company (division company of Macnica, Inc.) to offer a wider availability

Advanced market chip-set solution for RF ISM range 868MHz & 915MHz

IPDiA, a leading supplier of Silicon passive components, today introduced a new generation of RF companion chip products, expanding its product portfolio in high-density Integrated

IPDiA’s technology awarded with the ‘Grand Prix Siemens de l’Innovation’

This year, IPDiA has stood apart from the others thanks to its PICS technology (Passive Integration Connecting Substrate). This patented technology is using the thickness

IPDiA 1µF Silicon Capacitor 1206 Case Size: The Best Solution For High Reliabil …

IPDiA, leading manufacturer of silicon capacitors, today announced the launch of a new high temperature silicon capacitor that the company claims having the highest capacitance

IPDiA is a Finalist for the 2011 Red Herring Top 100 Europe Award

Caen – 16th May 2011 – IPDiA announced today it has been selected as a Finalist for Red Herring's Top 100 Europe award, a prestigious

Breakthroughs In Capacitors: IPDiA Introduces What Is Surely The First 10 µF Si …

IPDiA, leading supplier of 3D silicon passive components, brings to the electronic market the first 10 µF Silicon capacitor with outstanding stability and reliability features,

CEA-Leti Forms Common Lab with IPDiA to Focus on 3D-Integration Technologies for …

GRENOBLE, France – March 21st, 2011 – CEA-Leti and IPDiA have formed a common lab to capitalize on their complementary expertise in miniaturization and 3D

Through Silicon Via (TSV) Multi Part Wafer (MPW) by IPDiA

Through Silicon Via technology is known to offer numerous advantages: application and electrical performance benefits with shortest connections between dies for sensitive signals, double side

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